伊人久久大香线蕉综合bd高清,国产三级精品三级在线播放 ,欧美性猛xxxxx精品,久久久久国产精品熟女影院

0 賣盤信息

購(gòu)物車 0

BOM詢價(jià)

您現(xiàn)在的位置：首頁(yè) > 品牌信息 > QORVO/RFMD

關(guān)于QORVO/RFMD

							QORVO/RFMD
						

RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領(lǐng)域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設(shè)備、開(kāi)關(guān)和收發(fā)器等。除了提供標(biāo)準(zhǔn)產(chǎn)品外，RFMD公司還為用戶設(shè)計(jì)定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國(guó)有設(shè)五個(gè)設(shè)計(jì)中心。

為您找到相關(guān)結(jié)果 2269 條 211 /227

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點(diǎn),High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點(diǎn),High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點(diǎn),High Gain: 17.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特點(diǎn),High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特點(diǎn),High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述, ,The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.,特點(diǎn),High OIP3?=?35dBm at 1960MHz,Low DC Power: 3.3V, 23mA,Low NF = 1.6dB at 1960MHz,50MHz to 3000MHz Operation,Power Down Capability,Class 1C (1000V) HBM ESD Rating,MSL 1 Rating,Common Platform Compatible

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述, ,The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.,特點(diǎn),High OIP3?=?35dBm at 1960MHz,Low DC Power: 3.3V, 23mA,Low NF = 1.6dB at 1960MHz,50MHz to 3000MHz Operation,Power Down Capability,Class 1C (1000V) HBM ESD Rating,MSL 1 Rating,Common Platform Compatible

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特點(diǎn),Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述, ,RFMD’s SGC2463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2463Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2463Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω. ,特點(diǎn),Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 10.5dBm at 1950MHz,OIP3 = 23.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.,特點(diǎn),DC to 6GHz Operation,0.9dB NFMIN at 0.9GHz,24dB GMAX at 0.9GHz,|GOPT|=0.10 at 0.9GHz,OIP3=+28dBm P1dB=+9dBm,Low Cost High Performance Versatility

最新賣價(jià)	包裝	應(yīng)用	系列	電壓電源	工作溫度	封裝外殼

每頁(yè)顯示條

第一頁(yè) 上一頁(yè) [ 206 ] [ 207 ] [ 208 ] [ 209 ] [ 210 ] [ 211 ] [ 212 ] [ 213 ] [ 214 ] [ 215 ] 下一頁(yè) 共227 頁(yè) 最后一頁(yè)

購(gòu)物指南

客戶須知

交易須知

常見(jiàn)問(wèn)題

?用戶服務(wù)協(xié)議

支付與配送

匯款須知

其他支付

配送須知

關(guān)稅須知

售后服務(wù)

收貨驗(yàn)貨

退換貨流程

服務(wù)投訴

發(fā)票須知

特色服務(wù)

免費(fèi)入駐

實(shí)用工具

報(bào)關(guān)報(bào)檢

關(guān)于拍明芯城

關(guān)于我們

投資者關(guān)系

聯(lián)系我們

加入拍明芯城

各大手機(jī)應(yīng)用商城搜索“拍明芯城”

下載客戶端，隨時(shí)隨地買賣元器件！

產(chǎn)品型號(hào)索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

電子百科網(wǎng)站地圖友情鏈接產(chǎn)品詞庫(kù) 全部標(biāo)簽文庫(kù)型號(hào)

Copyright

2012- 2022 拍明芯城ICZOOM.com 版權(quán)所有客服熱線：400-693-8369 (9:00-18:00) 營(yíng)業(yè)執(zhí)照