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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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產品分類：

詳細描述,The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 20.2dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 14.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 14.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 17.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特點,High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特點,High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述, ,The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.,特點,High OIP3?=?35dBm at 1960MHz,Low DC Power: 3.3V, 23mA,Low NF = 1.6dB at 1960MHz,50MHz to 3000MHz Operation,Power Down Capability,Class 1C (1000V) HBM ESD Rating,MSL 1 Rating,Common Platform Compatible

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

詳細描述, ,The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.,特點,High OIP3?=?35dBm at 1960MHz,Low DC Power: 3.3V, 23mA,Low NF = 1.6dB at 1960MHz,50MHz to 3000MHz Operation,Power Down Capability,Class 1C (1000V) HBM ESD Rating,MSL 1 Rating,Common Platform Compatible

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

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