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RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領(lǐng)域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設(shè)備、開關(guān)和收發(fā)器等。除了提供標(biāo)準(zhǔn)產(chǎn)品外，RFMD公司還為用戶設(shè)計定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國有設(shè)五個設(shè)計中心。

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產(chǎn)品分類：

詳細(xì)描述,The RF5601 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,Bypass Function Included,2.3V to 4.8V Single Supply,1.8dB Noise Figure,12 dB Typical Gain,-5.0dB Gain in Bypass Mode

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產(chǎn)品分類：

詳細(xì)描述,The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 3mm x 3mm x 0.45mm 16-pin leadless chip carrier with a backside ground. The RF5602 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特點,Single 3.3V to 5V Supply,32dB to 34dB Small Signal Gain,3% EVM (RMS) at 27dBm, 5.0V,2% EVM (RMS) at 25dBm, 4.2V,3% EVM (RMS) at 23.5dBm, 3.3V,Integrated Power Detector on Die,Multiple Frequency Ranges

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產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4486Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4486Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 12.7dBm at 1950MHz,OIP3 = 27.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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產(chǎn)品分類：

詳細(xì)描述,RFMD's RFDA0045 is a digital controlled variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. The 6-bit digital step attenuator is programmed with serial mode control interface. The RFDA0045 is packaged in a 5.2mm x 5.2mm leadless laminate MCM with plated through thermal vias for low thermal resistance. The amplifier's bias chokes and DC blocks are external allowing for optimum performance over specific bands within 10MHz to 850MHz. , , Download RFMD’s Control Bit Generator Software ,特點,Frequency Range 10MHz to 850MHz,6-Bit Digital Step Attenuator,SPI Serial Control Programming,Max Gain = 44dB at 150MHz,Gain Control Range = 31.5dB (0.5dB Step Size),High OIP3 = 42dBm at 150MHz,High P1dB = 20dBm at 150MHz,Single +5V Supply,Small 32-Pin, 5.2mm x 5.2mm, MCM,Footprint Compatible with 5mm x 5mm, 32-Pin, QFN,Power-up Programming

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RF5602WL33PCK-410

產(chǎn)品分類：

詳細(xì)描述,The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 3mm x 3mm x 0.45mm 16-pin leadless chip carrier with a backside ground. The RF5602 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特點,Single 3.3V to 5V Supply,32dB to 34dB Small Signal Gain,3% EVM (RMS) at 27dBm, 5.0V,2% EVM (RMS) at 25dBm, 4.2V,3% EVM (RMS) at 23.5dBm, 3.3V,Integrated Power Detector on Die,Multiple Frequency Ranges

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RF5602WM50PCK-410

產(chǎn)品分類：

詳細(xì)描述,The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 3mm x 3mm x 0.45mm 16-pin leadless chip carrier with a backside ground. The RF5602 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特點,Single 3.3V to 5V Supply,32dB to 34dB Small Signal Gain,3% EVM (RMS) at 27dBm, 5.0V,2% EVM (RMS) at 25dBm, 4.2V,3% EVM (RMS) at 23.5dBm, 3.3V,Integrated Power Detector on Die,Multiple Frequency Ranges

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產(chǎn)品分類：

詳細(xì)描述,RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package,.,特點,P1dB = 29.5dBm at 2140MHz,ACP = -65dBc with 17dBm Channel Power at 2140MHz,Low Thermal Resistance Package,Power Up/Down Control <1μs,Robust Class 1C ESD

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產(chǎn)品分類：

詳細(xì)描述, ,RFMD’s RFDA0057 is a dual-channel, digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 7dB in its maximum gain state. The gains of two 6-bit digital step attenuators are programmed with a serial mode control interface (SPI). The RFDA0057 is packaged in a small 7.0mm??x??7.0mm leadless laminate MCM, which contains plated through thermal vias for ultra-low thermal resistance. This module is easy to use with no external matching components required., , Download RFMD’s Control Bit Generator Software ,特點,Dual Channel VGA,Frequency Range 400MHz to 2700MHz,Full Internal Matching and No External Bias Inductors,Two 6-Bit Digital Step Attenuators,12-Bit SPI Serial Control Programming,High Channel Isolation =?50dBc,Max Gain?=?18.5dB at 900MHz,Gain Control Range = 31.5dB (0.5dB Step Size),High OIP3/P1dB =?+37/19dBm at 900MHz,Single +?5V Supply,Small 32-Pin, 7.0mm?x?7.0mm, MCM,Power-up Programming

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產(chǎn)品分類：

詳細(xì)描述, ,RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.,特點,P1dB = 32dBm?at 2140MHz,ACP = -65dBc with 18.4dBm Channel Power at 2140MHz,Low Thermal Resistance Package,Power Up/Down Control <1μs,Robust Class 1C ESD

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產(chǎn)品分類：

詳細(xì)描述, ,The RF5612 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced BiFET Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in LTE Up Link (UL) mobile and Data Cards and 802.11e mobile applications. The device is provided in a 4mm?x?4mm?x?0.975mm, 10-Pin, leadless chip carrier with a backside ground. The RF5612 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特點,Single Supply Voltage 3.3V,32dB Typical Gain Across Frequency Band,POUT?= 27dBm, LTE UL,POUT?= 25dBm < 2.5% EVM,2.5GHz to 2.7GHz Frequency Range,Output Power Detector,Optimized for a 50W System

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