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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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產品分類：

其他射頻/IF和RFID

詳細描述,High Performance Signal Source,特點,Low Cost,Single Supply Operation,Low Power Consumption,Monotonic Tuning Across Entire Operating Band,Low Phase Noise,Operation Guaranteed at 0V Tune Voltage

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產品分類：

其他射頻/IF和RFID

詳細描述,High Performance Signal Source,特點,Low Cost,Single Supply Operation,Low Power Consumption,Monotonic Tuning Across Entire Operating Band,Low Phase Noise,Operation Guaranteed at 0V Tune Voltage

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

產品分類：

其他射頻/IF和RFID

詳細描述, ,RFMD's RFVC1831 is a 5V InGaP MMIC VCO with an integrated frequency divider providing additional Fo/2 and Fo/4 outputs. With an Fo frequency range of 7.3GHz to 8.2GHz its monolithic structure provides excellent temperature, shock, and vibration performance. Output power (Fo) is +10dBm and is flat across the tuning voltage range of 1.5V to 14.5V. Phase noise is typically -115dBc/Hz at 100kHz offset. The device operates from a low supply current of 230mA which can be further reduced to 170mA by disabling the divider functions if not required. The RFVC1831 is available in a low cost 5mm?x?5mm surface mount plastic overmolded QFN outline.,特點,Multiple Frequency Outputs Fo: 7.30GHz to 8.20GHz Fo/2: 3.65GHz to 4.10GHz Fo/4: 1.83GHz to 2.05GHz,Fo: 7.30GHz to 8.20GHz,Fo/2: 3.65GHz to 4.10GHz,Fo/4: 1.83GHz to 2.05GHz,No External Resonator Required,Integrated Frequency Divider,Phase Noise: -115dBc/Hz at 100kHz Offset,Flat Output Power Over Frequency Tuning Range 1.5V to 14.5V Fo: 10dBm Fo/2: 4dBm Fo/4: -2dBm,Fo: 10dBm,Fo/2: 4dBm,Fo/4: -2dBm,Low Power Consumption 5V/230mA (Divider On) 5V/170mA (Divider Off),5V/230mA (Divider On),5V/170mA (Divider Off),32-Lead 5mm x 5mm Plastic Overmolded QFN

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產品分類：

其他射頻/IF和RFID

詳細描述, ,The XFK-2001-1UH transformer is designed for applications that require small, low, ,cost, and reliable surface mount components. Applications may be found in broadband,, ,wireless, and other communicating systems. These units are built Lead-Free, ,and RoHS Compliant. S-Parameters are available on request.

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產品分類：

詳細描述, ,The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50? input and the output can be easily matched to obtain optimum power and efficiency characteristics.,特點,Single 2.8V to 3.6V Supply,32dBm Output Power,52% Efficiency,150MHz to 960MHz Operation

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產品分類：

詳細描述,RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.The matte tin finish on the lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.,特點,.05GHzto3.5GHz Operation,Lead Free, RoHS Compliant, andGreen Package,1.5dB NFMN at 2.44GHz,15.6dB GMAX at 2.44GHz,P1dB =+20.6dBm at 2.44GHz,OIP3 =+34.6dBm at 2.44GHz,Low Cost, High Performance,Versatility

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產品分類：

詳細描述,RFMD's RFDA0026 is a digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 4.1dB in its maximum gain state. The gain of the 6-bit digital step attenuator is programmed with a serial mode control interface (SPI). The RFDA0026 is packaged in a small 6.0mm x 6.0mm leadless laminate MCM, which contains plated through thermal vias for ultra low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特點,Frequency Range 700MHz to 1035MHz,Full Internal Matching and No?External Bias Inductors,6-Bit Digital Step Attenuator,SPI Serial Control Programming,Max Gain = 32dB at 900MHz,Gain Control Range = 31.5dB (0.5dB Step Size),High OIP3/P1dB = +40/23dBm,Single +5V Supply,Small 28-Pin, 6.0mm x 6.0mm, MCM,Power-up Programming

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產品分類：

詳細描述, ,The RF5515 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,2.3V to 4.8V Single Supply,1.6dB Noise Figure,11dB Typical Gain

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產品分類：

詳細描述,RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 12.4dBm at 1950MHz,OIP3 = 26.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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產品分類：

詳細描述,The RF5601 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,Bypass Function Included,2.3V to 4.8V Single Supply,1.8dB Noise Figure,12 dB Typical Gain,-5.0dB Gain in Bypass Mode

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